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| 2SC4276 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 15 5 80 +150 -55 to +150 Unit V V V A A W C C Electrical characteristics (Tc =25C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA ICEO = 0.2A IEBO = 1mA VCBO = 450V VEBO = 10V IC = 2A, VCE = 5V IC = 6A, IB = 1200mA IC = 7.5A, IB1 = 750mA IB2 = -1500mA, RL = 20 ohm Pw = 20s Duty=<2% Min. 500 400 10 Typ. Max. Units V V V mA mA V V s s s 25 0.1 0.1 65 0.8 1.2 1.0 2.5 0.5 Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case Min. Typ. Max. 1.56 Units C/W 1 2SC4276 Characteristics FUJI POWER TRANSISTOR Collector-Emitter voltage VCE[V] D.C. current gain hFE Base current IB[A] Collector current IC[A] Collector Output Characteristics DC Current Gain Saturation voltage VCE(sat), VBE(sat)[V] Collector current IC[A] Collector current IC[A] Collector-Emitter voltage VCE[V] Base and Collector Saturation Voltage Safe Operating Area *1 Switching Time Test Circuit Switching time ton, tstg, tf [s] Collector current IC[A] Switching Time 2 This datasheet has been download from: www..com Datasheets for electronics components. |
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